D1980 Datasheet 2SD1980

Manufacturer: ROHM

Datasheet Details

Power Transistor (100V, 2A) 2SD1980 .

1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316.
inner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter.
Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 100 Collector-emitter voltage VCEO 100 Emitter-base voltage VEBO 6 Collector current Collector power dissipation IC PC 2 3 ∗1 1 10 Junction temperatur.

Brand Logo	Part Number	Description	Manufacturer
	D1980	Silicon NPN Power Transistor	Inchange Semiconductor