D2118 - 2SD2118

Features

1) Low VCE(sat). VCE(sat) = 0.25V (Typ. ) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current IC 5 ICP 10 Collector power dissipation 2SD2118 Junction te.

ROHM

Datasheet Details

Part number	D2118
Manufacturer	ROHM
File Size	175.22 KB
Description	2SD2118
Datasheet	D2118 Datasheet
Additional preview pages of the D2118 datasheet.

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Full PDF Text Transcription

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Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412.

Published: Mar 17, 2016 |