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D2118 - 2SD2118

Features

  • 1) Low VCE(sat). VCE(sat) = 0.25V (Typ. ) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current IC 5 ICP 10 Collector power dissipation 2SD2118 Junction te.

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Datasheet Details

Part number D2118
Manufacturer ROHM
File Size 175.22 KB
Description 2SD2118
Datasheet download datasheet D2118 Datasheet

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Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412.
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