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DTA014YEB - 100mA/-50V Digital transistors

Download the DTA014YEB datasheet PDF. This datasheet also covers the DTA014YM variant, as both devices belong to the same 100ma/-50v digital transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See Equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy.
  • Dimensions (Unit : mm) VMT3 Abbreviated symbol : 34 EMT3F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTA014YM_Rohm.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTA014YEB
Manufacturer ROHM
File Size 1.03 MB
Description 100mA/-50V Digital transistors
Datasheet download datasheet DTA014YEB Datasheet

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Other Datasheets by ROHM

Part Number Description
DTA014YM 100mA/-50V Digital transistors
DTA014YUB 100mA/-50V Digital transistors
DTA014EEB 100mA/-50V Digital transistors
DTA014EM 100mA/-50V Digital transistors
DTA014EUB 100mA/-50V Digital transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet -100mA/-50V Digital transistors(with built-in resistors) DTA014YM / DTA014YEB / DTA014YUB Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See Equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. Dimensions (Unit : mm) VMT3 Abbreviated symbol : 34 EMT3F (3) (1) (2) Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Abbreviated symbol : 34 UMT3F 2.0 0.32 0.9 0.53 0.