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Rohm Semiconductor Electronic Components Datasheet

DTC114TU3 Datasheet

NPN 100mA 50V Digital Transistors

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DTC114T series
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter
Value
VCEO
50V
IC
100mA
R1
10kΩ
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary PNP Types: DTA114T series
lOutline
SOT-723
 
DTC114TM
(VMT3)
SOT-416
 
DTC114TE
(EMT3)
SOT-323
SOT-416FL
 
DTC114TEB
(EMT3F)
SOT-323FL
 
DTC114TUB
(UMT3F)
SOT-346
lApplication
INVERTER, INTERFACE,DRIVER
lInner circuit
DTC114TM/ DTC114TEB/ DTC114TUB
 
DTC114TU3
(UMT3)
 
DTC114TKA
(SMT3)
DTC114TE/ DTC114TU3/ DTC114TKA
lPackaging specifications
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTC114TM SOT-723
1212
T2L
180
8
8000
04
DTC114TEB SOT-416FL 1616
TL
180
8
3000
04
DTC114TE SOT-416
1616
TL
180
8
3000
04
DTC114TUB SOT-323FL 2021
TL
180
8
3000
04
DTC114TU3 SOT-323
2021 T106
180
8
3000
04
DTC114TKA SOT-346
2928 T146
180
8
3000
04
                                                                                        
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
1/9
20180419 - Rev.002


Rohm Semiconductor Electronic Components Datasheet

DTC114TU3 Datasheet

NPN 100mA 50V Digital Transistors

No Preview Available !

DTC114T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTC114TM
DTC114TEB
Power dissipation
DTC114TE
DTC114TUB
DTC114TU3
DTC114TKA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
Values
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
100
mA
150
150
150
PD*1
mW
200
200
200
Tj
150
Tstg
-55 to +150
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = 50μA
VCB = 50V
VEB = 4V
IC = 10mA, IB = 1mA
VCE = 5V, IC = 1mA
-
Transition frequency
f
*2
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
50 -
-
V
50 -
-
V
5
-
-
V
-
- 500 nA
-
- 500 nA
-
- 300 mV
100 250 600 -
7 10 13 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/9
                                        
20180419 - Rev.002


Part Number DTC114TU3
Description NPN 100mA 50V Digital Transistors
Maker Rohm
PDF Download

DTC114TU3 Datasheet PDF






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