DTDG14GPT100
Overview
- 5 W PD*3
- 0 W Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50μA 50 - 70 V Collector-emitter breakdown voltage BVCEO IC = 1mA Emitter-base breakdown voltage BVEBO IE = 720μA Collector cut-off current ICBO VCB = 40V Emitter cut-off current IEBO VEB = 4V Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA DC current gain hFE VCE = 2V, IC=500mA Emitter-base resistance R - 50 - 70 V 5 - - V
