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Rohm Semiconductor Electronic Components Datasheet

DTDG14GPT100 Datasheet

Digital transistor

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DTDG14GP
1A/60V Digital Transistor (with built-in resistor and zener diode)
Parameter
VCEO
IC
R
 
Value
60±10V
1A
10kΩ
 
lFeatures
1)High hFE.
  300(Min.) (VCE/IC=2V/0.5A)
2)Low saturation voltage.
  (VCE(sat)=400mV at IC/IB=500mA/5mA)
3)Built-in zener diode gives strong
 protection against reverse surge
 by L-load (an inductive load).
lOutline
SOT-89
 
SC-62
 
 
 
 
 
(MPT3)
 
              
lInner circuit
Datasheet
lApplication
DRIVER
lPackaging specifications
Part No.
Package
DTDG14GP
SOT-89
(MPT3)
Package
size
4540
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T100
180
12
1000
E01
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
20150925 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

DTDG14GPT100 Datasheet

Digital transistor

No Preview Available !

DTDG14GP
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
Values
Unit
VCBO
60±10
V
VCEO
60±10
V
VEBO
5
V
IC
1
A
ICP*1
2
A
PD*2
0.5
W
PD*3
2.0
W
Tj
150
Tstg
-55 to +150
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 50μA
50
-
70
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage BVEBO IE = 720μA
Collector cut-off current
ICBO VCB = 40V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA
DC current gain
hFE VCE = 2V, IC=500mA
Emitter-base resistance
R
-
50
-
70
V
5
-
-
V
-
- 500 nA
300 - 580 μA
-
- 400 mV
300 -
-
-
7 10 13 kΩ
Transition frequency
f
*4
T
VCE = 5V, IE = -100mA,
f = 30MHz
-
80
- MHz
*1 Pw10ms, duty=1/2
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40×40×0.7mm ceramic board.
*4 Characteristics of built-in transistor.
                                            
 
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
                                        
20150925 - Rev.001


Part Number DTDG14GPT100
Description Digital transistor
Maker Rohm
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DTDG14GPT100 Datasheet PDF






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