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Rohm Semiconductor Electronic Components Datasheet

EML11 Datasheet

General purpose transistor

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Transistors
EML11 / UML11N
General purpose transistor
(isolated transistor and diode)
EML11 / UML11N
2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplications
DC / DC converter
Motor driver
zFeatures
1) Tr2: Small Signal Transistor
Di1: Low VF
2) Small package
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
zExternal dimensions (Unit : mm)
EMT5
1.6
1.0
0.5 0.5
(5) (4)
0.5
(1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : L11
ROHM : EMT5
The following characteristics apply to both Di1 and Tr2.
zEquivalent circuit (EML11 / UML11N)
(5) (4)
Di1 Tr2
(1) (2) (3)
UMT5
2.0
1.3
0.65 0.65
(5) (4)
0.9
0.7
1pin mark
(1) (2) (3)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : L11
ROHM : UMT5
EIAJ : SC-88A
zPackaging specifications
Type
Package
Marking
Code
Basic ordering unit(pieces)
EML11
EMT5
L11
T2R
8000
UML11N
UMT5
L11
TR
3000
Rev.B
1/4


Rohm Semiconductor Electronic Components Datasheet

EML11 Datasheet

General purpose transistor

No Preview Available !

Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Average rectified forward current
Forward current surge peak (60HZ, 1)
Reverse voltage (DC)
Junction temperature
Symbol
IO
IFSM
VR
Tj
Limits
200
1
30
125
Unit
mA
A
V
°C
Tr2
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
Collector current
VEBO
IC
Power dissipation
PD
Junction temperature
Tj
Each terminal mounted on a recommended.
Limits
60
50
6
150
120
150
Di1 / DTr2
Parameter
Symbol
Power dissipation
Pd
Storage temperature
Tstg
Each terminal mounted on a recommended.
Limits
150
55 to +125
Unit
V
V
V
mA
mW
°C
Unit
mW
°C
EML11 / UML11N
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Min.
Typ.
0.40
4.0
Max.
0.50
30
Unit Conditions
V IF=200mA
µA VR=10V
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
60
50
6
180
Typ.
140
4.0
Max.
100
100
500
390
5.0
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−60V
VEB=−6V
IC/IB=−50mA/5mA
VCE=−6V, IC=−1mA
VCE=−12V, IE=2mA, f=100MHz
VCB=−12V, IE=0A, f=1MHz
Rev.B
2/4


Part Number EML11
Description General purpose transistor
Maker Rohm
Total Page 5 Pages
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