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Rohm Semiconductor Electronic Components Datasheet

EMN11 Datasheet

Switching diode

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Diodes
Switching diode
EMN11
zApplication
Ultra high speed switching
zExternal dimensions (Unit : mm)
zFeatures
1) Ultra small mold type. (EMD6)
2) High reliability
1.6±0.1
0.22±0.05
(6) (5) (4)
0.13±0.05
zConstruction
Silicon epitaxial planar
(1) (2)
0.5 0.5
1.0±0.1
(3)
ROHM : EMD6
JEITA : SC-75A Size
dot (year week factory)
0~0.1
0.5±0.05
zTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
EMN11
zLand size figure (Unit : mm)
1.0
0.5 0.5
0.3
0.25 0.15 0.15 0.25
0.4
EMD6
zStructure
0.3±0.1
1.65±0.1
1PIN
4.0±0.1
φ0.8±0.1
0.65±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average rectified forward current
Surge current t=1us(Single)
Power dissipation
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
Io
Isurge
Pd
Tj
Tstg
Limits
80
80
300
100
4
150
150
-55 to +150
Unit
V
V
mA
mA
A
mW/Total *
*Pd = 120mW when only 1 circuit is operating. CONDITION = Each terminal mounted on a recommended land pattern.(0.35×0.9mm)
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
VF
IR
Ct
trr
- - 1.2 V IF=100mA
-
- 0.1
µA VR=70V
-
- 3.5
pF VR=6V , f=1MHz
- - 4 ns VR=6V , IF=5mA , RL=50Ω
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

EMN11 Datasheet

Switching diode

No Preview Available !

Diodes
EMN11
zElectrical characteristic curves (Ta=25°C)
100 Ta=75℃ 10000
Ta=125℃
1000
10 Ta=150℃
Ta=25℃
100
Ta=-25℃
10
11
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0
100 200 300 400 500 600 700 800 900 100
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0.1
0.01
0
10 20 30 40 50 60 70
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
80
10
1
0.1
0
f=1MHz
5 10 15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
950 100
Ta=25℃
90
IF=100mA
940
n=30pcs
80
70
930 60
50
920 40
30
910 20
AVE:921.7m
900
10
0
VF DISPERSION MAP
Ta=25℃
VR=80V
n=10pcs
AVE:9.655nA
IR DISPERSION MAP
1.5
1.4 Ta=25℃
1.3
VR=6V
f=1MHz
1.2 n=10pcs
1.1
1
0.9 AVE:1.040pF
0.8
0.7
0.6
0.5
Ct DISPERSION MAP
20 10
9
Ifsm 1cyc
8
15
7
8.3ms
6
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
5
4
3
Ifsm
8.3ms 8.3ms
1cyc
10 5
42
3
5
21
AVE:3.50A
0
IFSM DISRESION MAP
1 AVE:1.93ns
0
trr DISPERSION MAP
0
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
1
0.1
Ifsm
t
1 10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
100
10
1
100 0.001
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100MA
1ms time
300us
0.1 10
TIME:t(ms)
Rth-t CHARACTERISTICS
1000
10
9
8
7
6
5
4
3
2
1
0
AVE:0.97kV
AVE:2.54kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.A
2/2


Part Number EMN11
Description Switching diode
Maker Rohm
Total Page 3 Pages
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