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Rohm Semiconductor Electronic Components Datasheet

K2504 Datasheet

2SK2504

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Transistors
4V Drive Nch MOS FET
2SK2504
2SK2504
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications
Switching
zPackaging specifications
Package
Type Code
Basic ordering unit (pieces)
2SK2504
Taping
TL
2500
zExternal dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
(1)Gate
(2)Drain
(3)Source
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
Abbreviated symbol : K2504
0.5
1.0
zInner circuit
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Reverse drain
current
Continuous
Pulsed
Total power dissipation(Tc=25°C)
Channel temperature
Storage temperature
Pw 10µs, Duty cycle 1%
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
PD
Tch
Tstg
Limits
100
±20
5
20
5
20
20
150
55 to +150
(1) Gate
(2) Drain
(3) Source
(1)
Unit
V
V
A
A
A
A
W
°C
°C
(2) (3)
Rev.A
1/5


Rohm Semiconductor Electronic Components Datasheet

K2504 Datasheet

2SK2504

No Preview Available !

www.datasheet4u.com
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-source leakage
IGSS
±100 nA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 100
V ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
10 µA VDS=100V, VGS=0V
Gate threshold voltage
VGS(th)
1.0
2.5
V VDS=10V, ID=1mA
Static drain-source on-state
resistance
Forward transfer admittance
0.18 0.22
ID=2.5A, VGS=10V
RDS(on)
0.25 0.28
ID=2.5A, VGS=4V
Yfs 4.0
S ID=2.5A, VDS=10V
Input capacitance
Ciss
520
pF VDS=10V
Output capacitance
Coss 175 pF VGS=0V
Reverse transfer capacitance
Crss 60 pF f=1MHz
Turn-on delay time
td(on) 5.0 ns ID=2.5A, VDD=50V
Rise time
tr 20 ns VGS=10V
Turn-off delay time
td(off) 50 ns RL=20
Fall time
Pw 300µs, Duty cycle 1%
tf 20 ns RG=10
2SK2504
Rev.A
2/5


Part Number K2504
Description 2SK2504
Maker Rohm
PDF Download

K2504 Datasheet PDF






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