Datasheet4U Logo Datasheet4U.com

PTZ9.1B - Zener diode

Features

  • 1) Small power mold type. (PMDS) 2) High ESD tolerance zConstruction Silicon epitaxial planar zStructure zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25qC) Param eter P ower dis s ipation J unction tem perature S torage tem perature Sym bol P Tj Ts tg Lim its 1000 150 -55 to +150 Unit mW Rev. E 1/4 PTZ9.1B Diodes zElectrical characteristics (Ta=25qC) Symbol TYP. Zener voltageVz(V) Operating resistance Zz(ȍ) Reverse current IR(μA) Te.

📥 Download Datasheet

Datasheet preview – PTZ9.1B

Datasheet Details

Part number PTZ9.1B
Manufacturer ROHM
File Size 141.97 KB
Description Zener diode
Datasheet download datasheet PTZ9.1B Datasheet
Additional preview pages of the PTZ9.1B datasheet.

📁 Similar Datasheet

  • PTZ9.1B - (PTZ3.6B - PTZ36B) SURFACE MOUNT SILICON ZENER DIODES (EIC)
  • PTZ9.1B - Zener diode (Excel Semiconductor)
  • PTZ9.1B - SURFACE MOUNT SILICON ZENER DIODES (SunMate)
  • PTZ10B - (PTZ3.6B - PTZ36B) SURFACE MOUNT SILICON ZENER DIODES (EIC)
  • PTZ10B - Zener diode (Excel Semiconductor)
  • PTZ10B - SURFACE MOUNT SILICON ZENER DIODES (SunMate)
  • PTZ11B - (PTZ3.6B - PTZ36B) SURFACE MOUNT SILICON ZENER DIODES (EIC)
  • PTZ11B - Zener diode (Excel Semiconductor)
  • PTZ11B - SURFACE MOUNT SILICON ZENER DIODES (SunMate)
  • PTZ12B - (PTZ3.6B - PTZ36B) SURFACE MOUNT SILICON ZENER DIODES (EIC)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
PTZ9.1B Diodes Zener diode PTZ9.1B zApplications zDimensions (Unit : mm) zLand size figure (Unit : mm) Voltage regulation zFeatures 1) Small power mold type. (PMDS) 2) High ESD tolerance zConstruction Silicon epitaxial planar zStructure zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25qC) Param eter P ower dis s ipation J unction tem perature S torage tem perature Sym bol P Tj Ts tg Lim its 1000 150 -55 to +150 Unit mW Rev.E 1/4 PTZ9.1B Diodes zElectrical characteristics (Ta=25qC) Symbol TYP. Zener voltageVz(V) Operating resistance Zz(ȍ) Reverse current IR(μA) Temperature coeficiency *Ȗz(mV/) ESD breakdown voltage ESD(kV) MIN. TYP. MAX. Iz(mA) Max. Iz(mA) MAX. VR(V) TYP. Iz(mA) PTZ 3.6B 3.600 3.813 4.
Published: |