* 1) The QS5U12 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast swicthing 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specificati
QS5U12
1.40 MB
2.5v drive nch+sbd mosfet.
QS5U12 2.5V Drive Nch+SBD MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 30V 100mΩ ±2.0A 1.25W lOutline TSMT5 lFe.
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