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Rohm Semiconductor Electronic Components Datasheet

QS5U13 Datasheet

2.5V Drive Nch+SBD MOSFET

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QS5U13
  2.5V Drive Nch+SBD MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
30V
100mΩ
±2.0A
1.25W
lOutline
TSMT5
 
 
      
      
 
 
 
      
lFeatures
1) The QS5U13 combines Nch MOSFET with a
  Schottky barrier diode in a single TSMT5
  package.
2) Low on-state resistance with fast swicthing
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Load switch, DC/ DC conversion
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
<MOSFET>
Marking
U13
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Gate - Source voltage
VGSS
12 V
Continuous drain current
ID ±2.0 A
Pulsed drain current
ID,
*1
pulse
±8.0
A
Continuous source current (body diode)
IS 0.8 A
Pulsed source current (body diode)
IS,
*1
pulse
3.2
A
Power dissipation
PD*3 0.9 W/element
Junction temperature
Tj 150
      
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/10
20150730 - Rev.001    


Rohm Semiconductor Electronic Components Datasheet

QS5U13 Datasheet

2.5V Drive Nch+SBD MOSFET

No Preview Available !

QS5U13
          
lAbsolute maximum ratings (Ta = 25°C)
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
                Datasheet
Symbol
VRM
VR
IF
IFSM*2
PD*3
Tj
Value
30
20
0.5
2.0
0.7
150
Unit
V
V
A
A
W/element
<MOSFET + Di>
Parameter
Power dissipation
Range of storage temperature
Symbol
PD*3
Tstg
Value
1.25
-55 to +150
Unit
W/total
lElectrical characteristics (Ta = 25°C)
<MOSFET>
Parameter
Symbol
Conditions
Gate - Source leakage current IGSS VGS = 12V, VDS = 0V
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage
drain current
Gate threshold voltage
Static drain - source
on - state resistance
Forward Transfer
Admittance
IDSS VDS = 30V, VGS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 4.5V, ID = 2.0A
RDS(on)*4 VGS = 4.0V, ID = 2.0A
VGS = 2.5V, ID = 2.0A
|Yfs|*4 VDS = 10V, ID = 2.0A
Values
Min. Typ. Max.
- - 10
Unit
μA
30 - - V
- - 1 μA
0.5 - 1.5 V
- 71 100
- 76 107 mΩ
- 110 154
1.5 - - S
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/10
                                          
20150730 - Rev.001


Part Number QS5U13
Description 2.5V Drive Nch+SBD MOSFET
Maker Rohm
Total Page 11 Pages
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