R5011ANJ Datasheet | ROHM

　　Nch 500V 11A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 500V 0.5Ω ±11A 75W l Outline LPT(S) SC-83 TO-263 　　　　　　 　　　　　　 　 　 　 　　　　　　 l Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed 　　to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; Ro HS pliant l Inner circuit l Packaging specifications Packing Embossed Tape Reel size (mm) 330 l Application Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code Marking R5011ANJ l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature TC = 25°C TC = 100°C VDSS ID- 1 ID- 1 ID,pulse- 2 VGSS EAS- 3 EAR- 4 IAR- 3 PD Tj Tstg 500 ±11 ±5.3 ±44 ±30 8.1 6.5 5.5 75 150 -55 to +150 V A A A V m J m J A W ℃ ℃ Reverse diode dv/dt dv/dt 15 V/ns 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 .rohm. © 2015 ROHM Co., Ltd. All rights reserved. 1/13 - Rev.002 　...