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Rohm Semiconductor Electronic Components Datasheet

R5011ANJ Datasheet

Nch 500V 11A Power MOSFET

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R5011ANJ
  Nch 500V 11A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
500V
0.5Ω
±11A
75W
lOutline
LPT(S)
SC-83
TO-263
      
      
 
 
 
      
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
  to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R5011ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
500
±11
±5.3
±44
±30
8.1
6.5
5.5
75
150
-55 to +150
V
A
A
A
V
mJ
mJ
A
W
Reverse diode dv/dt
dv/dt 15 V/ns
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
20150730 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

R5011ANJ Datasheet

Nch 500V 11A Power MOSFET

No Preview Available !

R5011ANJ
          
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
Symbol
dv/dt
Conditions
Values Unit
VDS = 400V, ID = 11A
50 V/ns
Tj = 125
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 1.67 /W
- - 80 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
V(BR)DSS VGS = 0V, ID = 1mA
V(BR)DS VGS = 0V, ID = 5.5A
VDS = 500V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 5.5A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
500 - - V
- 580 -
V
   
- 0.1 100 μA
- - 1000
- - ±100 nA
2.5 - 4.5 V
   
- 0.38 0.5 Ω
- 0.79 -
- 9.0 - Ω
                                                                                         
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/13
20150730 - Rev.002


Part Number R5011ANJ
Description Nch 500V 11A Power MOSFET
Maker Rohm
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R5011ANJ Datasheet PDF






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