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Rohm Semiconductor Electronic Components Datasheet

R5019ANJ Datasheet

10V Drive Nch MOSFET

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Data Sheet
10V Drive Nch MOSFET
R5019ANJ
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
LPTS
TO-263(D2PAK)
10.1
4.5 1.3
(1) Gate
(2) Drain
(3) Source
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R5019ANJ
Taping
TL
1000
Inner circuit
1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
500
30
19
76
19
76
9.5
24.3
100
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

R5019ANJ Datasheet

10V Drive Nch MOSFET

No Preview Available !

R5019ANJ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
RDS
*
(on)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min.
-
500
-
2.5
-
6.5
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
0.18
-
2050
1200
50
40
115
165
100
55
11
24
Max.
100
-
100
4.5
0.24
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
nA VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=500V, VGS=0V
V VDS=10V, ID=1mA
ID=9.5A, VGS=10V
S VDS=10V, ID=9.5A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 250V, ID=9.5A
ns VGS=10V
ns RL=26.3
ns RG=10
nC VDD 250V
nC ID=19A
nC VGS=10V
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5 V IS=19A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.10 - Rev.A


Part Number R5019ANJ
Description 10V Drive Nch MOSFET
Maker Rohm
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