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Rohm Semiconductor Electronic Components Datasheet

R6006AND Datasheet

Nch 600V 6A Power MOSFET

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R6006AND
Nch 600V 6A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
1.2W
6A
40W
lOutline
CPT3
(SC-63)
(SOT-428)
(1) (2)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate
(2) Drain
(3) Source
4) Drive circuits can be simple.
5) Parallel use is easy.
*1 BODY DIODE
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
16
2,500
TL
Marking
R6006A
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
6
2.9
24
30
2.4
1.9
3
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.04 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

R6006AND Datasheet

Nch 600V 6A Power MOSFET

No Preview Available !

R6006AND
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 6A
Tj = 125°C
Values Unit
50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 3.13 °C/W
- - 100 °C/W
- - 265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
600 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DS VGS = 0V, ID = 3A
- 700 -
V
Zero gate voltage
drain current
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
0.1 100 mA
- 1000
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
2.5
-
4.5
V
Static drain - source
on - state resistance
VGS = 10V, ID = 3A
RDS(on) *6 Tj = 25°C
Tj = 125°C
-
0.9 1.2
W
- 1.88 -
Gate input resistance
RG f = 1MHz, open drain
-
8.9
-
W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/13
2013.04 - Rev.B


Part Number R6006AND
Description Nch 600V 6A Power MOSFET
Maker Rohm
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