ROHM Semiconductor R6030KNZ
Power MOSFET
| Part No. | R6030KNZ |
|---|---|
| Datasheet | R6030KNZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6030KNZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.130Ω ID ±30A TO-3PF PD 86W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape width (mm) - Type Basic ordering unit (pcs) 360 Taping code C8 Marking R6030KNZ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±30 A ±90 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 5.2 A Avalanche energy, single pulse EAS*3 636 mJ Power dissipation (Tc = 25°C) PD 86 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001 R6030KNZ lThermal resistance Pa...
