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Rohm Semiconductor Electronic Components Datasheet

R6035KNZ1 Datasheet

N-channel 600V 35A Power MOSFET

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R6035KNZ1
  Nch 600V 35A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.102Ω
±35A
379W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-247
 
      
lInner circuit
 
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
-
450
Taping code
C9
Marking
R6035KNZ1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600
±35
±105
V
A
A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 6.6 A
Avalanche energy, single pulse
EAS*3
796 mJ
Power dissipation (Tc = 25°C)
PD 379 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150914 - Rev.001    


Rohm Semiconductor Electronic Components Datasheet

R6035KNZ1 Datasheet

N-channel 600V 35A Power MOSFET

No Preview Available !

R6035KNZ1
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.33 /W
- - 30 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 18.1A
RDS(on)*5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
- - 1000
- - ±100 nA
3 - 5V
   
- 0.092 0.102 Ω
- 0.200 -
- 1.0 - Ω
                                                                                         
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/12
20150914 - Rev.001


Part Number R6035KNZ1
Description N-channel 600V 35A Power MOSFET
Maker Rohm
Total Page 15 Pages
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