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Rohm Semiconductor Electronic Components Datasheet

R6046ANZ Datasheet

Drive Nch MOSFET

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R6046ANZ pdf
Data Sheet
10V Drive Nch MOSFET
R6046ANZ
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching
Dimensions (Unit : mm)
TO-3PF
15.5 φ3.6 5.5 3.0
2.0
0.75
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
5.45 5.45
2.0 3.0
0.9
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R6046ANZ
Bulk
-
360
Inner circuit
1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
Limits
600
30
46
115
46
115
23
142
120
150
55 to 150
www.DataSheet.co.kr
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.04
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Rohm Semiconductor Electronic Components Datasheet

R6046ANZ Datasheet

Drive Nch MOSFET

No Preview Available !

R6046ANZ pdf
R6046ANZ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
RDS (on*)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min.
-
600
-
2.5
-
19
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
65
33
6000
3900
90
60
130
230
100
150
35
55
Max.
100
-
100
4.5
81
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
nA VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=600V, VGS=0V
V VDS=10V, ID=1mA
mID=23A, VGS=10V
S VDS=10V, ID=23A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 300V, ID=23A
ns VGS=10V
ns RL=13.0
ns RG=10
nC VDD 300V
nC ID=46A
nC VGS=10V
Body diode characteristics (Source-Drain)
Parameter
Forward voltage
Symbol Min.
VSD *
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5 V IS=46A, VGS=0V
www.DataSheet.co.kr
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Part Number R6046ANZ
Description Drive Nch MOSFET
Maker Rohm
Total Page 6 Pages
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R6046ANZ pdf
R6046ANZ Datasheet PDF
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