ROHM Semiconductor R6504KNJ
Power MOSFET
| Part No. | R6504KNJ |
|---|---|
| Datasheet | R6504KNJ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6504KNJ Nch 650V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 1.050Ω ±4.0A 58W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6504KNJ Basic ordering unit (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±4.0 A ±12 A Gate - Source voltage Static AC (f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 0.8 A Avalanche energy, single pulse EAS*3 34.8 mJ Power dissipation (Tc = 25°C) PD 58 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20171004 - Rev.002 R6504KNJ lThermal resistance Parameter Thermal resistance, juncti...
