R8008ANJFRG Datasheet PDF

R8008ANJ FRG Nch 800V 8A Power MOSFET Datasheet lOutline VDSS 800V TO-263S RDS(on)(Max.) 1.03Ω SC-83 ID ±8A LPT(S) PD 195W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Pb-free plating ; RoHS compliant 5) AEC-Q101 qualified 6) lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R8008ANJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±8 A Pulsed drain current IDP*2 ±32 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 4 A Avalanche energy, single pulse EAS*3 4.2 mJ Power dissipation (Tc = 25°C) PD 195 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170920...