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RB051M-2Y - Schottky Barrier Diode

Features

  • )Small power mold type. （PMDU） 2)Ultra Low VF 3)High reliability PMDU.
  • Construction Silicon epitaxial planer.
  • Structure.
  • Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current(.
  • 1) Io Forward current surge peak （60Hz1cyc） IFSM Junction temperature Tj Storage temperature Tstg (.
  • 1)Mounting.

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Datasheet Details

Part number RB051M-2Y
Manufacturer ROHM
File Size 353.92 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB051M-2Y Datasheet
Additional preview pages of the RB051M-2Y datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Schottky Barrier Diode RB051M-2Y Applications General rectification Dimensions(Unit : mm)  Land size figure(Unit : mm) 1.2 0.85 Features 1)Small power mold type. （PMDU） 2)Ultra Low VF 3)High reliability PMDU Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current(*1) Io Forward current surge peak （60Hz1cyc） IFSM Junction temperature Tj Storage temperature Tstg (*1)Mounting on alumina board. Tc=95 C　Max.
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