Structure
4.5±0.3 0.1
2.8±0.2 0.1
(1) (2) (3)
for
(TO-220) 2) Low IR 3) High reliability
ed.
Construction nd s Silicon epitaxial planar
①
1.2 1.3 0.8
(1) (2) (3)
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
0.7±0.1 0.05
2.6±0.5
me ign ROHM :ＴO220FN ① Manufacture Date
m es.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
o D Reverse voltage (repetitive peak) c Reverse voltage (DC)
Average rectified forward curren.
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Data Sheet
Schottky barrier diode
RB225T-60
Applications
Dimensions (Unit : mm)
Switching power supply
Features 1) Cathode common type.
10.0±0.3 0.1
Structure
4.5±0.3 0.1
2.8±0.2 0.1
(1) (2) (3)
for
(TO-220) 2) Low IR 3) High reliability
ed Construction nd s Silicon epitaxial planar
①
1.2 1.3 0.8
(1) (2) (3)
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
0.7±0.1 0.05
2.6±0.
RB225T-60 Datasheet
