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RB225T100 - Schottky barrier diode

Key Features

  • 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planar.
  • Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : ＴO220FN ① Manufacture Date 2.6±0.5.
  • Structure (1) (2) (3).
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 110 V Reverse voltage (DC).

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Datasheet Details

Part number RB225T100
Manufacturer ROHM
File Size 294.99 KB
Description Schottky barrier diode
Datasheet download datasheet RB225T100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky barrier diode RB225T100 Applications Switching power supply Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planar Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : ＴO220FN ① Manufacture Date 2.6±0.