RCJ081N20 Datasheet PDF

RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 770mW 8.0A 40W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lApplication Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C *4 Range of storage temperature lOutline (2) LPT(S) (SC-83) (1) (3) lInner circuit (1) Gate (2) Drain (3) Source *1 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Quantity (pcs) Taping code Marking Taping 330 24 1,000 TL RCJ081N20 Symbol Value Unit VDSS 200 V ID *1 8.0 A ID *1 4.3 A ID,pulse *2 32 A VGSS 30 V EAS *3 5.17 mJ IAR *3 4.0 A PD 40 W PD 1.56 W Tj 150 °C Tstg -55 to +150 °C © 2012 ROHM Co., Ltd.