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RCJ100N25 Datasheet PDF

ROHM Semiconductor RCJ100N25

Power MOSFET

Part No. RCJ100N25
Datasheet RCJ100N25 Download
Manufacturer
ROHM Semiconductor
Description Power MOSFET
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RCJ100N25 datasheet page 1 preview

FEATURES

1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested
●Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
●Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C *4 Range of storage temperature
●Outline (2) LPT(S) (SC-83) (1) (3)
●Inner circuit (1) Gate ∗1 (2) Drain (3) Source 1 BODY DIODE (1) (2) (3)
●Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 330 24 1,000 TL RCJ100N25 Symbol Value Unit VDSS 250 V ID *1 10 A ID *1 5.4 A ID,pulse *2 40 A VGSS 30 V EAS *3 7.29 mJ IAR *3 5.0 A PD 85 W PD 1.56 W Tj 150 °C Tstg 55 to 150 °C © 2015 ROHM Co., Ltd.
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