ROHM Semiconductor RCJ510N25
Power MOSFET
| Part No. | RCJ510N25 |
|---|---|
| Datasheet | RCJ510N25 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested●Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
●Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C *4 Range of storage temperature
●Outline LPT(S) (SC-83)
●Inner circuit (1) (2) (3) (1) Gate ∗1 (2) Drain (3) Source 1 BODY DIODE (1) (2) (3)
●Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 330 24 1,000 TL RCJ510N25 Symbol Value Unit VDSS 250 V ID *1 51 A ID *1 27.7 A ID,pulse *2 160 A VGSS 30 V EAS *3 197.9 mJ IAR *3 25.5 A PD 304 W PD 1.56 W Tj 150 °C Tstg 55 to 150 °C © 2015 ROHM Co., Ltd.
