RCX510N25 - SILICON N-CHANNEL MOS FET

ROHM

Datasheet Details

Part number	RCX510N25
Manufacturer	ROHM
File Size	130.75 KB
Description	SILICON N-CHANNEL MOS FET
Datasheet	RCX510N25 Datasheet

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PRODUCTS TO-220FM TYPE RCX510N25 PAGE 1/4 1.TYPE RCX510N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS 250V GATE-SOURCE VOLTAGE VGSS ±30V DRAIN CURRENT CONTINUOUS PULSED ID IDP SOURCE CURRENT (BODY DIODE) CONTINUOUS PULSED IS ISP ±51A* ±204A* PW≦10μs DUTY CYCLE≦1% 51A* 204A* PW≦10μs DUTY CYCLE≦1% TOTAL POWER DISSIPATION PD 40W (Tc=25℃) CHANNEL TEMPERATURE Tch 150℃ RANGE OF STORAGE TEMPERATURE Tstg －55～150℃ 5. THERMAL RESISTANCE CHANNEL TO CASE Rth(ch-c) 3.13oC/W * Limited only by maximum channel temperature allowed DESIGN CHECK APPROVAL DATE：26/DEC/2008 TSZ22111･04 REV.： 0 SPECIFICATION No.TSQ03050-RCX510N25 PRODUCTS TO-220FM TYPE RCX510N25 PAGE 2/4 6.