RF2001T2D Key Features
- Construction Silicon epitaxial planar
- Dimensions (Unit : mm)
- Absoslute maximum ratings (Ta=25C)
- Electrical characteristic (Ta=25C) Parameter
- 0.87 0.93 IR
- 0.01 10 trr
- Electrical characteristics curves
| Part Number | Description |
|---|---|
| RF2001T2DFH | Fast Recovery Diode |
| RF2001T2DNZ | Super Fast Recovery Diode |
| RF2001T3D | Fast Recovery Diodes |
| RF2001T3DFH | Fast Recovery Diode |
| RF2001T3DNZ | Super Fast Recovery Diode |