RFNL10TJ6S diode equivalent, super fast recovery diode.
1) Ultra low forward voltage 2) Low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type
9.56±0.2 2.6±0.1 1.4±0.2 13.51
3.95±0.1
.
indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For.
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