ROHM Semiconductor RGT50NS65D
Field Stop Trench IGBT
| Part No. | RGT50NS65D |
|---|---|
| Datasheet | RGT50NS65D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Field Stop Trench IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 650 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 IF IF IFP*1 PD PD 48 25 75 35 20 75 194 97 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax. Tstg -55 to +175 Unit V V A A A A A A W W °C °C © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.01 - Rev.A RGT50NS65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Typ. Max. Unit - - 0.77 °C/W - - 2.12 °C/W lIGBTELECTRICAL CHARACTERISTICS
(at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - U...
