Download RGTH50TS65D Datasheet PDF
RGTH50TS65D page 2
Page 2
RGTH50TS65D page 3
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RGTH50TS65D Key Features

  • Emitter Saturation Voltage
  • Series)
  • 1 Built in FRD
  • free Lead Plating ; RoHS pliant

RGTH50TS65D Description

1/11 2014.05 - Rev.B RGTH50TS65D lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Unit - - 0.86 °C/W - - 2.28 °C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. 2/11 2014.05 - Rev.B RGTH50TS65D Data Sheet lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min.