RJ1L08CGN Datasheet PDF

RJ1L08CGN Nch 60V 80A Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 7.7mΩ ±80A 96W lFeatures 1) Low on - resistance 2) High power small mold package 3) Pb-free lead plating ; RoHS compliant 4) 100% Rg and UIS tested 5) Halogen free lOutline TO-263AB LPT(L) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Power tool Reel size (mm) 330 Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TLL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) RJ1L08CGN Parameter Symbol Value Unit Drain - Source voltage VDSS Continuous drain current VGS = 10V ID*1 Pulsed drain current IDP*2 Gate - Source voltage VGSS Avalanche current, single pulse IAS*3 Avalanche energy, single pulse EAS*3 Power dissipation PD*1 Junction temperature Tj Operating junction and storage temperature range Tstg 60 V ±80 A ±160 A ±20 V 37 A 52 mJ 96 W 150 ℃ -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.004 RJ1L08CGN lThermal resistance Parameter Thermal resistance, junction - case Datasheet Symbol RthJC*1 Values Unit Min.