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Rohm Semiconductor Electronic Components Datasheet

RK7002A Datasheet

Transistors

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Transistors
Switching (60V, 300mA)
RK7002A
RK7002A
!Features
1) Low on-resistance.
2) High ESD
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
!Structure
Silicon N-channel
MOSFET transistor
!Equivalent circuit
(3)
!External dimensions (Units : mm)
1.3
2.4
Each lead has same dimensions
ROHM : SST3
EIAJ : SOT-23
Abbreviated symbol : RKS
(1) Source
(2) Gate
(3) Drain
(2)
Gate
Protection
Diode.
(1)
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP1
Continuous
Drain reverse current
Pulsed
Total power dissipation
IDR
IDRP1
PD2
Channel temperature
Tch
Storage temperature
Tstg
1 Pw10µs, Duty cycle1%
2 When using 1×0.75×0.062 inch glass epoxy board.
Limits
60
±20
300
1.2
300
1.2
200
150
55~+150
Unit
V
V
mA
A
mA
A
mW
°C
°C
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Rohm Semiconductor Electronic Components Datasheet

RK7002A Datasheet

Transistors

No Preview Available !

Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Symbol
IGSS
V (BR) DSS
IDSS
VGS (th)
Drain-source on-state resistance RDS (on)1
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
1 PW300µs, Duty cycle1%
2 Pulsed
l Yfs l1
Ciss
Coss
Crss
td (on)2
tr2
td (off)2
tf2
Qg2
Qgs2
Qgd2
Min.
60
1
200
Typ.
0.7
1.1
33
14
9
6
5
13
80
36
0.6
0.5
Max.
±10
1
2.5
1.0
1.5
Unit Test Conditions
µA VGS20V, VDS=0V
V ID=10µA, VGS=0V
µA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=300mA, VGS=10V
ID=300mA, VGS=4V
mS VDS=10V, ID=300mA
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=150mA, VDD 30V
ns VGS=10V
ns RL=200
ns RGS=10
nC VDD 30V
nC VGS=10V
nC ID=200mA
RK7002A
!Packaging specifications
Type
RK7002A
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
!Electrical characteristic curves
1.2
10V
1.0 8V
6V
4V
0.8
0.6 3.5V
0.4
VGS=3V
0.2
Ta=25°C
Pulsed
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
1
VDS=10V
Pulsed
0.1
0.01
Ta=−25°C
25°C
75°C
125°C
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
2.5
VDS=10V
ID=1mA
Pulsed
2.0
1.5
1.0
0.5
0.0
50 25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage
vs. channel temperature


Part Number RK7002A
Description Transistors
Maker Rohm
Total Page 5 Pages
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