RQ3E080GN Description
RQ3E080GN Nch 30V 18A Middle Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 30V 16.7mΩ ±18A 14W lFeatures 1) Low on - resistance. 2) High power package (HSMT8). 3) Pb-free lead plating.
RQ3E080GN Key Features
- resistance. 2) High power package (HSMT8). 3) Pb-free lead plating ; RoHS pliant 4) Halogen free 5) 100% Rg and UIS test