Full PDF Text Transcription for RQ5E040AJ (Reference)
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RQ5E040AJ. For precise diagrams, and layout, please refer to the original PDF.
RQ5E040AJ Nch 30V 4A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 37mΩ ±4.0A 1W lFeatures 1) Low on - resistance. 2) High Power Package (TSMT3). 3) Pb-free lead plati...
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on - resistance. 2) High Power Package (TSMT3). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline TSMT3 (SC-96) lInner circuit Datasheet lApplication Switching lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Range of storage temperature lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 180 8 3000 TCL FK Symbol VDSS ID ID,pulse*1 VGSS EAS*2 IAS*2 PD*3