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4V Drive Pch MOSFET
RRL035P03
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TUMT6
Features 1) Low On-resistance. 2) High speed switching.
Abbreviated symbol :UF
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RRL035P03 Type Taping TR 3000 ○
Inner circuit
(6) (5) (4)
∗2
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Symbol VDSS VGSS
Limits 30 20 3.5
*1
Unit V V A A A A W C C
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
(1)
(2)
0.2Max.
RRL035P03 Datasheet
