ROHM Semiconductor RRS090P03HZG
Power MOSFET
RRS090P03HZG Pch -30V -9A Power MOSFET Datasheet lOutline VDSS -30V RDS(on)(Max.) 15.4mΩ SOP8 ID ±9A PD lFeatures 2.0W lInner circuit 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) Sn100% plating 6) AEC-Q101 Qualified lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 12 2500 Taping code TB Marking RRS090P03 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Operating junction and storage temperature range VDSS -30 V ID ±9 A IDP*1 ±36 A VGSS ±20 V PD*2 2.0 W PD*3 1.4 W Tj 150 ℃ Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 - Rev.001 RRS090P03HZG lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*2 RthJA*3 Values Unit Min.