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Rohm Semiconductor Electronic Components Datasheet

RSD150N06 Datasheet

4V Drive Nch MOSFET

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Data Sheet
4V Drive Nch MOSFET
RSD150N06
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Applications
Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
CPT3
TL
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
15
30
15
30
20
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Tc=25°C
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
1
(1) Gate
(2) Drain
(3) Source
2
1 ESD Protection Diode
2 Body Diode
(1) (2) (3)
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c)*
Limits
6.25
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.02 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RSD150N06 Datasheet

4V Drive Nch MOSFET

No Preview Available !

RSD150N06
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
60
-
1.0
-
-
-
7
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
28
33
36
-
930
200
80
10
30
45
15
18.0
3.2
3.8
Max.
10
-
1
3.0
40
47
51
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=15A, VGS=10V
mID=15A, VGS=4.5V
ID=15A, VGS=4.0V
S ID=15A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=7.5A, VDD 30V
ns VGS=10V
ns RL=4.0
ns RG=10
nC VDD 30V
nC ID=15A,
nC VGS=10V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=15A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.02 - Rev.A


Part Number RSD150N06
Description 4V Drive Nch MOSFET
Maker Rohm
Total Page 7 Pages
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