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Rohm Semiconductor Electronic Components Datasheet

RSD200N10 Datasheet

4V Drive Nch MOSFET

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4V Drive Nch MOSFET
RSD200N10
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be 20V.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications
Switching
Dimensions (Unit : mm)
CPT3
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Source)
Packaging specifications
Package
Code
Type Basic ordering unit (pieces)
RSD200N10
Taping
TL
2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
100
Gate-source voltage
Drain current
Continuous
Pulsed
VGSS
ID
IDP
3
1
±20
±20
±80
Source current
(Body Diode)
Continuous
Pulsed
IS
ISP 1
20
80
Avalanche Current
IAS 2
20
Avalanche Energy
EAS 2
85
Total power dissipation (Tc=25°C)
PD
20
Channel temperature
Tch 150
Range of storage temperature
Tstg
1 Pw10μs, Duty cycle1%
2 L 265μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
3 Limited only by maximum tempterature allowed
55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Inner circuit
2
1 BODY DIODE
1 2 ESD PROTECTION
DIODE
(1)GATE
(2)DRAIN
(3)SOURCE
(1) (2) (3)
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
6.25
Unit
°C/W
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.04 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

RSD200N10 Datasheet

4V Drive Nch MOSFET

No Preview Available !

RSD200N10
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
− ±10 μA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 100
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
10 μA VDS=100V, VGS=0V
Gate threshold voltage
VGS(th)
1.0
2.5
V VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on)
41 52 mΩ ID=10A, VGS=10V
44 58 mΩ ID=10A, VGS=4.5V
Forward transfer admittance
| Yfs |
14
45 59 mΩ ID=10A, VGS=4.0V
− − S ID=10A, VDS=10V
Input capacitance
Ciss 2200 pF VDS=25V
Output capacitance
Coss 180 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
110
18
61
128
193
48.5
5.5
13
pF f=1MHz
ns ID=10A, VDD 50V
ns VGS=10V
ns RL=5Ω
ns RG=10Ω
nC VDD 50V
nC
ID=20A
VGS=10V
nC RL=2.5Ω / RG=10Ω
Pulsed
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD
1.5 V
Pulsed
Conditions
IS= 20A, VGS=0V
Data Sheet
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
2/3
2012.04 - Rev.B


Part Number RSD200N10
Description 4V Drive Nch MOSFET
Maker Rohm
Total Page 4 Pages
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