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4V Drive Nch MOSFET
RSH065N06
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Application Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH065N06
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipatino
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID IDP ∗1
IS ISP ∗1 PD ∗2
Tch
Tstg
Limits 60 20 ±6.5 ±26 1.6 26 2.