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Rohm Semiconductor Electronic Components Datasheet

RSH065N06 Datasheet

4V Drive Nch MOSFET

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4V Drive Nch MOSFET
RSH065N06
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH065N06
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipatino
Channel temperature
Range of storage temperature
1 Pw10μs, Duty cycle1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
60
20
±6.5
±26
1.6
26
2.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth (ch-A)
Limits
62.5
Unit
°C / W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8) (7) (6)
(5) (8) (7) (6) (5)
2
1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RSH065N06 Datasheet

4V Drive Nch MOSFET

No Preview Available !

RSH065N06
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS 60
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th) 1.0
Static drain-source on-state
resistance
Forward transfer admittance
RDS (on)
Yfs
4
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Pulsed
Typ.
24
28
31
900
200
100
13
25
60
20
11
2
4
Max.
10
1
2.5
37
44
48
16
Unit Conditions
μA VGS=20V, VDS=0V
V ID=1mA, VGS=0V
μA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=6.5A, VGS=10V
mΩ ID=6.5A, VGS=4.5V
ID=6.5A, VGS=4.0V
S ID=6.5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=3.3A, VDD 30V
ns VGS=10V
ns RL=9.1Ω
ns RG=10Ω
nC ID=6.5A, VDD 30V
nC VGS=5V
nC RL=4.6Ω, RG=10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
VSD
1.2 V
Conditions
IS=1.6A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A


Part Number RSH065N06
Description 4V Drive Nch MOSFET
Maker Rohm
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RSH065N06 Datasheet PDF





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