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Rohm Semiconductor Electronic Components Datasheet

RSH070N05 Datasheet

4V Drive Nch MOSFET

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4V Drive Nch MOSFET
RSH070N05
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH070N05
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
45
20
±7.0
*1 ±28
1.6
*1 28
*2 2
150
-55 to +150
*1 PW10, Duty cycle1
*2 Mounted on a ceramic board
Unit
V
V
A
A
A
A
W
oC
oC
Thermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
Rth(ch-a) *
Limits
62.5
Unit
oC/W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
2
1
(1) (2) (3)
1 ESD Protection Diode.
2 Body Diode.
(4)
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RSH070N05 Datasheet

4V Drive Nch MOSFET

No Preview Available !

RSH070N05
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − 10 μA VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45
V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 μA VDS= 45V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA
Static drain-source on-state
resistance
RDS (on)
18 25 mΩ ID=7A, VGS= 10V
23 32 mΩ ID= 7A, VGS= 4.5V
25 35 mΩ ID= 7A, VGS= 4.0V
Forward transfer admittance Yfs 6.0 − − S VDS= 10V, ID= 7A
Input capacitance
Ciss
1000
pF VDS= 10V
Output capacitance
Coss 230 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
125
16
27
57
21
12.0 16.8
3.0
4.6
pF f=1MHz
ns VDD 25V
ns ID= 3.5A
VGS= 10V
ns RL=7.1Ω
ns RG=10Ω
nC VDD 25V VGS= 5V
nC ID= 7A
nC RL=3.6Ω RG=10Ω
Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Symbol
Min.
Typ.
Forward voltage
VSD *
* pulsed
Max.
1.2
Unit Condition
V IS=1.6A/VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A


Part Number RSH070N05
Description 4V Drive Nch MOSFET
Maker Rohm
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