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Rohm Semiconductor Electronic Components Datasheet

RSQ015N06 Datasheet

Nch 60V 1.5A Power MOSFET

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RSQ015N06
Nch 60V 1.5A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
60V
290mW
1.5A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSMT6
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
PX
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
60
1.5
6
20
1.25
0.6
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

RSQ015N06 Datasheet

Nch 60V 1.5A Power MOSFET

No Preview Available !

RSQ015N06
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 100 °C/W
- - 208 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
60 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
VGS (th)
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = 10V, ID = 1mA
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID = 1mA
ΔTj referenced to 25°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS=10V, ID=1.5A
RDS(on) *5
VGS=4.5V, ID=1.5A
VGS=4V, ID=1.5A
VGS=10V, ID=1.5A, Tj=125°C
RG
gfs *5
f = 1MHz, open drain
VDS = 10V, ID = 1.5A
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
-
-
-
1.0
-
-
-
-
-
-
1.0
67
-
-
-
-4.4
210
240
255
360
10
2.4
- mV/°C
1 mA
10 mA
2.5 V
- mV/°C
290
330
mW
350
510
-W
-S
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.B


Part Number RSQ015N06
Description Nch 60V 1.5A Power MOSFET
Maker Rohm
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RSQ015N06 Datasheet PDF






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