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Rohm Semiconductor Electronic Components Datasheet

RSR020N06 Datasheet

Nch 60V 2A Power MOSFET

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RSR020N06
Nch 60V 2A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
60V
170mW
2A
1.0W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSMT3
(3)
(1)
(2)
lInner circuit
(1) Gate
(2) Source
(3) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TL
PZ
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
60
2
8
20
1.0
0.54
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

RSR020N06 Datasheet

Nch 60V 2A Power MOSFET

No Preview Available !

RSR020N06
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 125 °C/W
- - 231 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
60 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25°C
-
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
VGS (th)
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = 10V, ID = 1mA
-
-
1.0
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID = 1mA
ΔTj referenced to 25°C
-
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS=10V, ID=2A
RDS(on) *5
VGS=4.5V, ID=2A
VGS=4.0V, ID=2A
VGS=10V, ID=2A, Tj=125°C
RG
gfs *5
f = 1MHz, open drain
VDS = 10V, ID = 2A
-
-
-
-
-
1.3
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (12×20×0.8mm)
67
-
-
-
-4.4
120
140
150
220
3.0
3.0
- mV/°C
1 mA
10 mA
2.5 V
- mV/°C
170
195
mW
210
310
-W
-S
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.B


Part Number RSR020N06
Description Nch 60V 2A Power MOSFET
Maker Rohm
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RSR020N06 Datasheet PDF






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