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RSX201VAM30 - Schottky Barrier Diode

Key Features

  • 1) Small mold type (TUMD2M) 2) High reliability 3) Low VF and low IR 2.0±0.1 2.5±0.1 0~0.1 (2) ROHM : TUMD2M Manufacture date and factory TUMD2M lStructure (1)Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 4.0±0.1 Φ 1.5 +0.1 -0 (2) Anode 0.25±0.05 1.75±0.1 3.5±0.05 8.0±0.2 5.5±0.2 2.8±0.05 1.53±0.03 Φ +0.2 1.0 -0 0.9±0.08 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Rever.

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Datasheet Details

Part number RSX201VAM30
Manufacturer ROHM
File Size 498.08 KB
Description Schottky Barrier Diode
Datasheet download datasheet RSX201VAM30 Datasheet

Full PDF Text Transcription for RSX201VAM30 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RSX201VAM30. For precise diagrams, and layout, please refer to the original PDF.

Schottky Barrier Diode RSX201VAM30 Data Sheet lApplication General rectification lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17±0.04 0.6±0.1 lLand Size Figure (Unit : mm) ...

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mm) 1.4±0.1 0.8±0.05 0.17±0.04 0.6±0.1 lLand Size Figure (Unit : mm) 1.1 0.8 0.5 2.0 (1) lFeatures 1) Small mold type (TUMD2M) 2) High reliability 3) Low VF and low IR 2.0±0.1 2.5±0.1 0~0.1 (2) ROHM : TUMD2M Manufacture date and factory TUMD2M lStructure (1)Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 4.0±0.1 Φ 1.5 +0.1 -0 (2) Anode 0.25±0.05 1.75±0.1 3.5±0.05 8.0±0.2 5.5±0.2 2.8±0.05 1.53±0.03 Φ +0.2 1.0 -0 0.9±0.08 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.