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Rohm Semiconductor Electronic Components Datasheet

RSY160P05 Datasheet

4V Drive Pch MOSFET

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Transistors
4V Drive Pch MOSFET
RSY160P05
RSY160P05
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Same land pattern as CPT3 (D-PAK).
zApplication
Switching
zDimensions (Unit : mm)
TCPT
(2)
(1) (3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSY160P05
Taping
TL
2500
zEquivalent circuit
1
2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Tc=25°C
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
45
±20
±16
±32
16
32
20
150
55 to +150
zThermal resistance
Parameter
Channel to ambient
Tc=25°C
Symbol
Rth (ch-c)
Limits
6.25
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
(1) Gate
(2) Drain
(3) Source
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
1/5


Rohm Semiconductor Electronic Components Datasheet

RSY160P05 Datasheet

4V Drive Pch MOSFET

No Preview Available !

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −45V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)
35 50 mID= −16A, VGS= −10V
45 63 mID= −8A, VGS= −4.5V
50 70 mID= −8A, VGS= −4.0V
Forward transfer admittance
Yfs 8.5
S VDS= −10V, ID= −8A
Input capacitance
Ciss
2150
pF VDS= −10V
Output capacitance
Coss 250 pF VGS=0V
Reverse transfer capacitance Crss
150
Turn-on delay time
td (on) 13
Rise time
tr 30
Turn-off delay time
td (off) 90
Fall time
tf 105
pF f=1MHz
ns ID= −10A
ns VDD 25V
VGS= −10V
ns RL=2.5
ns RG=10
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
Qgd
17.0 25.5
5.2
5.5
nC VDD 25V ID= −10A
nC VGS= −5V
nC RL=2.5RG=10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Pulsed
VSD
− −1.2 V IS= −16A, VGS=0V
RSY160P05
2/5


Part Number RSY160P05
Description 4V Drive Pch MOSFET
Maker Rohm
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RSY160P05 Datasheet PDF






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