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RTQ035N03 Datasheet 2.5V Drive Nch MOS FET

Manufacturer: ROHM

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Overview

www.DataSheet4U.com RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TSMT6 1.0MAX 0.85 0.7 (1) (2) (3) 1pin mark 0.4 0.16 zApplications Switching zPackaging specifications Package Type RTQ035N03 Code Basic ordering unit (pieces) Taping TR 3000 Each lead has same dimensions Abbreviated symbol : QP zInner circuit (6) (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±3.5 ±15 1.0 4.0 1.25 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W 0.3~0.

Key Features

  • 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). 2.9 1.9 0.95 0.95 (6) (5) (4) 1.6 2.8 0~0.1 (3) 1/2 RTQ035N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transf.

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