RUC002N05 - N-Channel MOSFET

ROHM

Key Features

1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(1.2V drive).

RUC002N05 n-channel mosfet by ROHM - Datasheet Preview

Datasheet Details

Part number	RUC002N05
Manufacturer	ROHM
File Size	135.03 KB
Description	N-Channel MOSFET
Datasheet	RUC002N05 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1.2V Drive Nch MOSFET RUC002N05  Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(1.2V drive).  Application Switching  Dimensions (Unit : mm) SST3 Abbreviated symbol : RH  Packaging specifications Package Type Code Basic ordering unit (pieces) RUC002N05 Taping T116 3000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 50 8 200 800 150 800 200 150 55 to +150 *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.