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Rohm Semiconductor Electronic Components Datasheet

RUF015N02 Datasheet

1.8V Drive Nch MOSFET

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Transistors
1.8V Drive Nch MOSFET
RUF015N02
RUF015N02
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (1.8V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RUF015N02
Taping
TL
3000
zDimensions (Unit : mm)
TUMT3
SOT-323T
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : PS
zInner circuit
(3)
(1)
1
2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
(2)
1 ESD PROTECTION DIODE
2 BODY DIODE
Limits
20
10
±1.5
±3.0
0.6
2.4
0.8
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
156
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/3


Rohm Semiconductor Electronic Components Datasheet

RUF015N02 Datasheet

1.8V Drive Nch MOSFET

No Preview Available !

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
20
0.3
1.6
Typ.
130
170
220
110
18
15
5
5
20
3
1.8
0.3
0.3
Max.
10
1
1.0
180
240
310
2.5
Unit Conditions
µA VGS=10V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mID= 1.5A, VGS= 4.5V
mID= 1.5A, VGS= 2.5V
mID= 0.8A, VGS= 1.8V
S VDS= 10V, ID= 1.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns ID= 1.0A
ns VDD 10V
VGS= 4.5V
ns RL=10
ns RG=10
nC VDD 10V
nC VGS= 4.5V
nC ID= 1.5A
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − 1.2 V IS= 0.6A, VGS=0V
RUF015N02
2/3


Part Number RUF015N02
Description 1.8V Drive Nch MOSFET
Maker Rohm
Total Page 4 Pages
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