Full PDF Text Transcription for RUS100N02 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RUS100N02. For precise diagrams, and layout, please refer to the original PDF.
RUS100N02 Nch 20V 10A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 20V 12mΩ ±10A 2.0W lFeatures 1) Low on - resistance. 2) High Power small mold Package (SOP8). 3) Pb-fre...
View more extracted text
ow on - resistance. 2) High Power small mold Package (SOP8). 3) Pb-free lead plating ; RoHS compliant. lOutline SOP8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking RUS100N02 lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature VDSS ID ID,pulse*1 VGSS PD*2 Tj Tstg 20 ±10 ±36 ±10 2.