ROHM Semiconductor RV4C020ZPHZG
Small Signal MOSFET
RV4C020ZP HZG Pch -20V -2.0A Small Signal MOSFET Datasheet AEC-Q101 Qualified VDSS RDS(on)(Max.) ID PD -20V 260mΩ ±2.0A 1.5W lFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive(1.5V) 4) 100% UIS tested. 5) Wettable Flank for automated optical solder inspection(AOI). Electrode part 130μm guarantee. lOutline DFN1616-8S DFN1616-6W lInner circuit lPackaging specifications Packing Reel size (mm) lApplication Battery switch Type Tape width (mm) Quantity (pcs) High speed line driver Taping code High side load switch Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP*1 VGSS IAS*5 EAS*5 PD*2 PD*3 Tj Tstg -20 ±2.0 ±8.0 ±8 2.2 0.4 1.5 0.7 150 -55 to +150 Embossed Tape 180 8 3000 TCR1 ZU Unit V A A V A mJ W W ℃ ℃ © 2019 ROHM Co., Ltd.