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Rohm Semiconductor Electronic Components Datasheet

RVQ040N05 Datasheet

Nch 45V 4A Power MOSFET

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RVQ040N05
  Nch 45V 4A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
45V
53mΩ
±4.0A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT6
SC-95
SOT-457T
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
DC/DC converters
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
Marking
QG
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
45 V
Continuous drain current
ID ±4.0 A
Pulsed drain current
ID,pulse*2
±16
A
Gate - Source voltage
VGSS
±21 V
Power dissipation
PD*3 1.25 W
PD*4 0.6 W
Junction temperature
Tj 150
Range of storage temperature
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001    


Rohm Semiconductor Electronic Components Datasheet

RVQ040N05 Datasheet

Nch 45V 4A Power MOSFET

No Preview Available !

RVQ040N05
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*3
RthJA*4
Values
Min. Typ. Max.
- - 100
- - 208
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
IDSS VDS = 45V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±21V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
VGS = 10V, ID = 4A
Static drain - source
on - state resistance
RDS(on)*5 VGS = 4.5V, ID = 4A
VGS = 4.5V, ID = 4A
VGS = , ID =
Gate input resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*5 VDS = 10V, ID = 4A
Values
Unit
Min. Typ. Max.
45 - - V
- 42 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -4.2 - mV/
- 38 53
- 47 66
- 53 74
- --
- 7-Ω
36-S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20150730 - Rev.001


Part Number RVQ040N05
Description Nch 45V 4A Power MOSFET
Maker Rohm
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RVQ040N05 Datasheet PDF





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